| PART |
Description |
Maker |
| NN514256 NN514256A NN514256AJ-40 NN514256AJ-45 NN5 |
CMOS 256K x 4bit Dynamic RAM
|
ETC[ETC]
|
| K4E660411D-TC60 K4E640411D-JC50 K4E640411D-JC60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| K4E640412E-TI45 K4E640412E-TI50 K4E640412E-TI60 K4 |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| GM71C4400CJ-80 GM71C4400CLJ-60 GM71C4400CLJ-70 GM7 |
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM 1,048,576字4位的CMOS动态随机存储器
|
LG, Corp.
LG Semicon Co.,Ltd.
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E660412E-JI45 K4E640412E-JP45 K4E660412E-JI60 K4 |
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 33uF; Voltage: 100V; Case Size: 10x25 mm; Packaging: Bulk
CONNECTOR ACCESSORY
16M x 4bit CMOS Dynamic RAM with Extended Data Out 16米x 4位的CMOS动态随机存储器的扩展数据输
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| NN514256AT-40 NN514256AT-45 NN514256 NN514256A NN5 |
RESISTOR-METAL FILM 的CMOS 256 × 4位动态随机存储器
CMOS 256K x 4bit Dynamic RAM 的CMOS 256 × 4位动态随机存储器
RES, 11.0 OHM 63MW 75V 1% 100PPM CHIP, 0603
|
http://
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM48V2100C |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode(2M x 8浣?MOS ?ㄦ?RAM(甯?揩??〉妯″?))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB514400BJ-BT60 Q67100-Q749 Q67100-Q750 Q67100-Q7 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM 1M X 4 FAST PAGE DRAM, 80 ns, PDSO20
RES 121-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA
|
SIEMENS AG
Siemens Semiconductor G...
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
